例句與造句

1. Gallium arsenide single crystal - determination of dislocation density
   砷化鎵單晶位錯(cuò)密度的測(cè)量方法
2. There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers
   發(fā)現(xiàn)高溫生長(zhǎng)前樣品的表面狀態(tài)對(duì)隨后生長(zhǎng)的gan生長(zhǎng)機(jī)制及最終外延層中的位錯(cuò)密度有很大影響。
3. In the relatively high dislocation density areas , dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure . here the profile of c concentration in the dimension of a cellular structure is " u " - shaped . the cell diameter increases as the dislocation density decreases , dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure
   發(fā)現(xiàn)晶片中位錯(cuò)密度和分布嚴(yán)重影響碳的微區(qū)分布，高密度位錯(cuò)區(qū)，位錯(cuò)形成較小的胞狀結(jié)構(gòu)，胞內(nèi)無(wú)孤立位錯(cuò)，碳在單個(gè)胞內(nèi)呈u型分布；較低密度位錯(cuò)區(qū)，胞狀結(jié)構(gòu)直徑較大，胞內(nèi)存在孤立位錯(cuò)，碳在單個(gè)胞內(nèi)呈w型分布。
4. The defect and interface in sapphire and gan were observed by afm . we found that when the dislocation density in sapphire was lower thanl05 / cm2 , the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire . the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4 , and the mo content in gan was lower than ppm . so it was concluded that low - cost mo crucible is viable
   用掃描電鏡( sem ) 、 xps 、電子探針和紫外熒光光譜儀測(cè)量了藍(lán)寶石襯底和gan外延層中的mo雜質(zhì)的含量，發(fā)現(xiàn)藍(lán)寶石襯底中含有mo雜質(zhì)，含量約為10 ~ ( - 4 ) (質(zhì)量含量) ；而在外延層gan中沒有檢測(cè)到mo雜質(zhì)，即mo雜質(zhì)含量小于ppm級(jí)。
5. It's difficult to find dislocation density in a sentence. 用dislocation density造句挺難的